t4 - lds -0 302 , rev. 1 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 1 of 5 1n6675-1 C 1n6677-1 plus dsb0.5a20 C dsb0.5a40 available on commercial versions 200 and 500 ma schottky barrier rectifiers qualified per mil - prf - 19500/ 610 qualified levels * : jan, jantx, jantxv and jan s description the 1n 66 75 - 1 thr ough 1n6677 - 1 series of schottky barrier rectifiers provides a selection of 200 or 500 ma ratiings in an axial - leaded, hard glass do - 35 package. the 1n6677 - 1 is also available in jan, jantx, jantxv, and jans military qualifications . do - 35 (do - 204ah) package also available in : do - 213aa melf (surface mount) 1n6675 ur -1 C 1n6677 ur -1 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n 6675 thr ough 1n6677 number series . ? hermetically sealed . ? m etallurgical ly bond ed . ? double plug construction. ? * jan, jantx, jantxv and jans qualification are availa ble per mil - prf - 19500/610 for 1n6677 - 1 only . ? rohs compliant versions are available on all commercial types. applications / benefits ? flexible axial - lead mounting terminals. ? non - sensitive to esd per mil - std - 750 m ethod 1020. maximum ratings @ t a = 25 o c unless otherwise stated msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 tel: (978) 620 - 2600 fax: (978) 689 - 0803 msc C irela nd gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test c onditions symbol value unit junction temperature t j - 65 to +125 oc storage temperature t stg - 65 to +150 oc thermal resistance, junction - to - lead @ lead length = 0.375 inch (9.52 mm) from body r ? jl 250 oc /w surge peak forward current at 8.3 ms half - sine wave for 1n6677 - 1 i fsm 5 a (pk) average rectified output current: 1n6675 -1 C 1n6677 -1 ( 1) dsb 0.5a20 C dsb0.5a40 i o 200 500 ma solder temperatur e @ 10 s 260 o c notes: 1. see figure 1 derating. downloaded from: http:///
t4 - lds -0 302 , rev. 1 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 2 of 5 1n6675-1 C 1n6677-1 plus dsb0.5a20 C dsb0.5a40 mechanical and packaging ? case: hermetically sealed glass case. do - 35 (do - 204ah) package. ? terminals: tin -l ead or rohs compliant annealed matte -t in plating (commerc ial grade only) over copper clad steel. s olderable per mil - std - 750, m ethod 2026. ? marking: part number and cathode band. ? polarity: reference diode to be operated with the banded (cathode) end positive with respect to the opposite end. ? tape & reel optio n: standard per eia - 296 (add tr suffix to part number). consult factory for quantities. ? weight: approximately 0.2 grams. ? see p ackage di mensions on last page. part nomenclature 1n6675 - 1 C 1n6677 - 1: 1n6675 -1 ( e3) jedec type number (s ee electrical characteristic s t able ) rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant metallurgically bonded 1n6677 - 1 only: jan 1n6677 -1 (e3) reliability level * jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level jedec type number (s ee electrical characteristic s t able ) rohs compliance e3 = rohs c ompliant (on commercial grade only) bla nk = non - rohs c ompliant metallurgically bonded dsb0.5a20 C dsb0.5a40: dsb 0. 5a 20 (e3) diode schottky barrier amp rating working peak reverse voltage rating ( v rwm ) rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant downloaded from: http:///
t4 - lds -0 302 , rev. 1 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 3 of 5 1n6675-1 C 1n6677-1 plus dsb0.5a20 C dsb0.5a40 symbols & definitions symbol definition c capacitance: the capacitance in pf at a frequency of 1 mhz and specified voltage. f frequency i r reverse current: the dc current flowing from the external circuit into the cathode terminal at the specified v oltage v r . i fsm surge peak forward current: the forward current including all nonrepetitive transient currents but excluding all repetitive transients (ref jesd282-b) i o average rectified output current: the output current averaged over a full cycle with a 50 hz or 60 hz sin e - wave input and a 180 degree conduction angle. v (br) breakdown voltage: a voltage in the breakdown region. v f forward voltage: a positive dc anode - cathode voltage the device will exhibit at a specifie d forward current. v r reverse voltage: a positive dc cathode - anode voltage below the breakdown region. v rwm working peak reverse voltage: the peak voltage excluding all transient voltages (ref je sd282 - b). also sometimes known historically as piv. electrical characteristics @ 25 o c unless otherwise specified 200 ma options: type number (note 1) working peak reverse voltage maximum forward voltage maximum forward voltage maximum forward voltage maximum reverse leakage current i rm @ v r m maximum capacitanc e @ v r = 0 volts f = 1.0 mhz v rwm v f @ 20 ma v f @ 200 ma v f @ 630 ma t j = +25 oc t j = 100 oc c v (pk) volts volts volts a ma pf 1n6675 -1 20 0.37 0.50 0.70 5.0 0.60 50 1n6676 -1 30 0.37 0.50 0.70 5.0 0.60 50 1n6677 -1 40 0.37 0.50 0.70 5.0 0.60 50 note: 1. these numbers can also be ordered as dsb0.2a20, dsb0.2a30, and dsb0.2a40. 500 ma options: type number working peak reverse voltage maximum forward voltage maximum forward voltage maximum reverse leakage current i rm @ v r m maximum capacitance @ v r = 0 volts f = 1.0 mhz v rwm v f @ 100 ma v f @ 500 ma t j = +25 oc t j = 100 oc c t v (pk) volts volts a ma pf dsb0.5a20 20 0.50 0.65 10.0 1.0 60 dsb0.5a30 30 0.50 0.65 10.0 1.0 60 dsb0.5a40 40 0.50 0.65 1 0.0 1.0 60 downloaded from: http:///
t4 - lds -0 302 , rev. 1 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 4 of 5 1n6675-1 C 1n6677-1 plus dsb0.5a20 C dsb0.5a40 graphs t l (c) (sink) figure 1 temperature power derating for 1n6677 -1 time (s) figure 3 thermal impedance curve for 1n6677 -1 s in ewave operation maximum io rating (ma) theta ( c/w) downloaded from: http:///
t4 - lds -0 302 , rev. 1 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 5 of 5 1n6675-1 C 1n6677-1 plus dsb0.5a20 C dsb0.5a40 package dimensions ltr d imensions notes inch m illimeters min max min max bd 0 .0 60 0.075 1.52 1.91 3 bl 0.140 0.180 3.56 4.57 3 ld 0 .018 0 .022 0.46 0.56 ll 1.000 1.500 25.40 38.10 ll 1 0 .050 1.27 4 no tes: 1. dimensions are in inches. 2. millimeters are given for information onl y. 3. package contour optional w ithin bd and length b l. h eat slugs, if any shall be included w ithin this c y linder but shall not be subject to minimum limit of bd. 4 . w ithin this zone, lead diameter may vary to all ow for lead finishes and irregularities, other than heat slugs. 5 . in accordance w ith asme y1 4.5m, diameters are equivalent to x s y mbolog y. 6. the dimensions shown are tighter in tolerance than dimensions shown in the military slas h sheet (/156) since microsemi now only offers the smaller do - 35 package option rather than the larger do - 7. downloaded from: http:///
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